View H6968S_618609.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4
H6968S / H6968CS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected)
* 8-Lead Plastic SO-8 Package Code: S
Features
* RDS(on)=32m@VGS=2.5V, ID=5.5A * RDS(on)=24m@VGS=4.5V, ID=6.5A * Advanced Trench Process Technology * High Density Cell Design for Ultra Low On-Resistance * Specially Designed for Li ion Battery Packs Use * Designed for Battery Switch Appliactions * ESD Protected
Absolute Maximum Ratings (T =25 C, unless otherwise noted)
o A
Symbol VDS VGS ID IDM PD Tj, Tstg RJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed)
*1
Parameter
Ratings 20 12 6.5 30 2 1.3 -55 to +150 62.5
Units V V A A W W C C/W
Total Power Dissipation @TA=25oC Total Power Dissipation @TA=75 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)*2
o
*1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board
Pin Assignment & Internal Schematic Diagram
Part No. Pin Assignment Internal Schematic Diagram
D1 D2 G2
H6968S
S2 G2 S1 G1
1 2 3 4 Top View
8 7 6 5
D2 D2 D1 D1
G1
S1 D
S2 D G2
H6968CS
S2 G2 S1 G1
1 2 3 4 Top View
8 7 6 5
D D D D
G1
S1
S2
H6968S, H6968CS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25C, unless otherwise noted)
Symbol * Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS * Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=10V, ID=1A, VGS=4.5V RGEN=6 VDS=10V, VGS=0V, f=1MHz VDS=10V, ID=6A, VGS=4.5V Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Transconductance VGS=0V, ID=250uA VGS=2.5V, ID=5.5A VGS=4.5V, ID=6.5A VDS=VGS, ID=250uA VDS=16V, VGS=0V VGS=4.5V, VDS=0V VDS=10V, ID=6.5A 20 0.6 Characteristic Test Conditions Min.
Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 2/4
Typ.
Max.
Unit
24 20 30
32 24 1.6 1 200 -
V m V uA nA S
9 2.4 3.6 476 65.1 49 50 100 500 200
ns pF nC
* Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=1.5A 0.61 1.7 1.2 A V
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Switching Test Circuit
VDD td(on)
ton tr
Switching Waveforms
td(off)
toff tf 90%
90% RD VIN VGEN RG G S Input, VIN 10% Pulse Width 50% 50% 90% D VOUT Output, VOUT 10% 10%
Inverted
H6968S, H6968CS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SO-8 Dimension
A G
H6968S Marking:
Pb Free Mark
Pb-Free: " . " (Note) H Normal: None
Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 3/4
S
8 B
7
6
5 C 4 J H
I
6968 Control Code
Pin 1 Index Date Code
Pin1 Index
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
2
3
H6968CS Marking:
Pb Free Mark
Pb-Free: " . " (Note) H Normal: None
D
S
E
Part A
K L N O
6968C Control Code
Pin 1 Index Date Code
Part A
DIM A B C D E F G H I J K L M N O
Min. 4.85 3.85 5.80 1.22 0.37 3.74 1.45 4.80 0.05 0.30 0.19 0.37 0.23 0.08 0.00
Max. 5.10 3.95 6.20 1.32 0.47 3.88 1.65 5.10 0.20 0.70 0.25 0.52 0.28 0.13 0.15
M
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D Note: Green label is used for pb-free packing Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
*: Typical, Unit: mm
F
8-Lead SO-8 Plastic Surface Mounted Package HSMC Package Code: S
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
H6968S, H6968CS
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile
tP TP Ramp-up TL Tsmax Temperature tL
Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 4/4
Critical Zone TL to TP
Tsmin tS Preheat
Ramp-down
25 t 25oC to Peak Time
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3oC/sec
Pb-Free Assembly <3oC/sec
100oC 150oC 60~120 sec
150oC 200oC 60~180 sec
<3oC/sec
<3oC/sec
183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes
o o
217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes
Peak temperature 245oC 5oC 260 C +0/-5 C
o o
Dipping time 5sec 1sec 5sec 1sec
H6968S, H6968CS
HSMC Product Specification

▲Up To Search▲

Price & Availability of H6968S

	To Download H6968S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .